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dc.contributor.authorSu, Jen-Yien_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorWu, Po-Yien_US
dc.date.accessioned2014-12-08T15:09:26Z-
dc.date.available2014-12-08T15:09:26Z-
dc.date.issued2009-06-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2009.2020034en_US
dc.identifier.urihttp://hdl.handle.net/11536/7205-
dc.description.abstractThis letter makes a comparison between Q-band 0.15 mu m pseudomorphic high electron mobility transistor (pHEMT) and metamorphic high electron mobility transistor (mHEMT) stacked-LO subharmonic upconversion mixers in terms of gain, isolation and linearity. In general, a 0.15 mu m mHEMT device has a higher transconductance and cutoff frequency than a 0.15 mu m pHEMT does. Thus, the conversion gain of the mHEMT is higher than that of the pHEMT in the active Gilbert mixer design. The Q-band stacked-LO subharmonic upconversion mixers using the pHEMT and mHEMT technologies have conversion gain of -7.1 dB and -0.2 dB, respectively. The pHEMT upconversion mixer has an OIP(3) of -12 dBm and an OP(1 dB) of -24 dBm, while the mHEMT one shows a 4 dB improvement on linearity for the difference between the OIP(3) and OP(1 dB). Both the chip sizes are the same at 1.3 mm x 0.9 mm.en_US
dc.language.isoen_USen_US
dc.subjectMetamorphic high electron mobility transistor (mHEMT)en_US
dc.subjectpseudomorphic high electron mobility transistor (pHEMT)en_US
dc.subjectQ-banden_US
dc.subjectstacked-LOen_US
dc.subjectsubharmonicen_US
dc.subjectupconversionen_US
dc.titleQ-Band pHEMT and mHEMT Subharmonic Gilbert Upconversion Mixersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2009.2020034en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume19en_US
dc.citation.issue6en_US
dc.citation.spage392en_US
dc.citation.epage394en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000267496300018-
dc.citation.woscount6-
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