標題: Q-Band pHEMT and mHEMT Subharmonic Gilbert Upconversion Mixers
作者: Su, Jen-Yi
Meng, Chinchun
Wu, Po-Yi
電信工程研究所
Institute of Communications Engineering
關鍵字: Metamorphic high electron mobility transistor (mHEMT);pseudomorphic high electron mobility transistor (pHEMT);Q-band;stacked-LO;subharmonic;upconversion
公開日期: 1-Jun-2009
摘要: This letter makes a comparison between Q-band 0.15 mu m pseudomorphic high electron mobility transistor (pHEMT) and metamorphic high electron mobility transistor (mHEMT) stacked-LO subharmonic upconversion mixers in terms of gain, isolation and linearity. In general, a 0.15 mu m mHEMT device has a higher transconductance and cutoff frequency than a 0.15 mu m pHEMT does. Thus, the conversion gain of the mHEMT is higher than that of the pHEMT in the active Gilbert mixer design. The Q-band stacked-LO subharmonic upconversion mixers using the pHEMT and mHEMT technologies have conversion gain of -7.1 dB and -0.2 dB, respectively. The pHEMT upconversion mixer has an OIP(3) of -12 dBm and an OP(1 dB) of -24 dBm, while the mHEMT one shows a 4 dB improvement on linearity for the difference between the OIP(3) and OP(1 dB). Both the chip sizes are the same at 1.3 mm x 0.9 mm.
URI: http://dx.doi.org/10.1109/LMWC.2009.2020034
http://hdl.handle.net/11536/7205
ISSN: 1531-1309
DOI: 10.1109/LMWC.2009.2020034
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 19
Issue: 6
起始頁: 392
結束頁: 394
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