標題: High-Speed Multilevel Wrapped-Select-Gate SONOS Memory Using a Novel Dynamic Threshold Source-Side-Injection (DTSSI) Programming Method
作者: Wang, Kuan-Ti
Chao, Tien-Sheng
Wu, Woei-Cherng
Chiang, Tsung-Yu
Wu, Yi-Hong
Yang, Wen-Luh
Lee, Chien-Hsing
Hsieh, Tsung-Min
Liou, Jhyy-Cheng
Wang, Shen-De
Chen, Tzu-Ping
Chen, Chien-Hung
Lin, Chih-Hung
Chen, Hwi-Huang
電子物理學系
Department of Electrophysics
關鍵字: Dynamic-threshold;memory;poly-Si-oxide-nitride-oxide-silicon (SONOS)
公開日期: 1-Jun-2009
摘要: A. high programming speed with a low-power-consumption wrapped-select-gate poly-Si-oxide-nitride-oxide-silicon memory is successfully demonstrated using the novel dynamic threshold source-side-injection programming technique. The select gate embedded in such particular memory structure acts like a dynamic MOSFET resulting in programming current (I(PGM)) that can be enhanced in this DT mode, easily attaining a high programming speed of about 100 ns. It still doubles the memory density by achieving the 2-bit/cell operation with MLC under DT mode.
URI: http://dx.doi.org/10.1109/LED.2009.2019255
http://hdl.handle.net/11536/7203
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2019255
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 6
起始頁: 659
結束頁: 661
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