Title: Impact of gate tunneling leakage on performances of phase locked loop circuit in nanoscale CMOS technology
Authors: Chen, Jung-Sheng
Ker, Ming-Dou
電機學院
College of Electrical and Computer Engineering
Issue Date: 2007
Abstract: The influence of gate tunneling leakage on the circuit performances of phase locked loop (PLL) in nanoscale CMOS technology has been investigated by simulation. The basic PLL with second-order loop filter is used to simulate the impact of gate tunneling leakage on performance degradation of PLL in a standard 90-nm CMOS process. The MOS capacitors with different oxide thicknesses are used to investigate this impact to PLL. The locked time, static phase error, and jitter of second-order PLL are degraded by the gate tunneling leakage of MOS capacitor in loop filter.
URI: http://hdl.handle.net/11536/7201
http://dx.doi.org/10.1109/RELPHY.2007.370002
ISBN: 978-1-4244-0918-1
DOI: 10.1109/RELPHY.2007.370002
Journal: 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL
Begin Page: 664
End Page: 665
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000246989600143.pdf