|標題:||A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity|
Kao, H. L.
Chen, Y. J.
Liu, S. L.
McAlister, S. P.
Department of Electronics Engineering and Institute of Electronics
|摘要:||We report the performance of 0.18 mu m RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain (LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz f(max), and a good adjacent channel power ratio (ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.|
|期刊:||IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST|
|Appears in Collections:||Conferences Paper|