Poly(3-hexylithiophene)/ZTO nanowire p-n junction for microelectronics
The investigation, characterization and application of materials with nanostructuresare important issues. In this work, p–n organic-inorganic, hetero-junction devices, composed of p-type conducting polymers(p3HT nanowire mesh) and n-type Zinc Tin Oxide (ZTO) NWs, were fabricated using e-beam lithography technique. The current-voltage (I-V) and field-effect measurements for ZTO NW, p3HT NW mesh, and the ZTO/p3HT junction were carried out. The I-V curve of ZTO/p3HT junction reveals a significant rectification manner. For ZTO NW and p3HT NW mesh, the majority carriers of n- and p-type, respectively, were determined. According to the slopes of current-gating voltage (I-Vg) curves in the turn-on region, the electron and hole mobilities of ZTO and p3HT NW mesh are decided to be 5.2×10-3 and 1.3×10-4 cm2/V-s, respectively. A novel peak observed in I-Vg curve of the ZTO/p3HT junction has been observed and it is ascribed to the superposition effects from the n-, p-channel, and the ZTO/p3HT junction. For the optoelectronic property investigation, the photo-response of ZTO NW, p3HT NW mesh and the ZTO/p3HT junction are measured under the shining of the He-Ne laser. The photo-response of the ZTO/p3HT junction shows the highest response.The result could come from the built-in electric field, which enhances photo-excited electron-hole pairs, in the p–n junction. Besides, the photovoltaic effect is also measured to be about 0.17%. On the other hand, p3HT NW mesh was used as a top gate.The top gate of the P3HT and the back gate of the silicon wafer are employed to control the channel current within ZTO NW.Our device demonstrates the operation of the three-stat buffer device in logic circuits.
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