標題: Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention
作者: Chung, Steve S.
Tseng, Y. H.
Lai, C. S.
Hsu, Y. Y.
Ho, Eric
Chen, Terry
Peng, L. C.
Chu, C. H.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: A novel cell operation scheme featuring low voltage, high speed, and excellent data retention has been proposed for SONOS flash memory First, in 1bit/cell operation, program is achieved by a back-bias assisted hot hole injection, while erase is achieved by forward-bias assisted electron injection. For a thick tunnel oxide (50A degrees), the ultra-low voltage (similar to 5V) and ultra-fast speed (<1 mu sec) operation has been the record reported to date. On the other hand, a 2 bit/cell operation is also demonstrated, in which very good retention can be achieved in comparison to conventional operation schemes, e.g., CHE (channel hot electron) or BTB(Band-to-band) tunneling etc.
URI: http://hdl.handle.net/11536/7179
http://dx.doi.org/10.1109/IEDM.2007.4418972
ISBN: 978-1-4244-1507-6
DOI: 10.1109/IEDM.2007.4418972
期刊: 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2
起始頁: 457
結束頁: 460
Appears in Collections:Conferences Paper


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