標題: Interface effect of oxygen doping in polythiophene
作者: Liu, Chien-Cheng
Yang, Chia-Ming
Liu, Wen-Hsing
Liao, Hua-Hsien
Horng, Sheng-Fu
Meng, Hsin-Fei
物理研究所
Institute of Physics
關鍵字: Poly(3-hexylthiophene) transistor;On-off ratio;Glass substrate
公開日期: 1-Jun-2009
摘要: Long-time evolution of the electrical characteristics for two-terminal and transistor of poly(3-hexylthiophene) film with various gate dielectric interfaces are measured. The oxygen doping is found to depend sensitively on the amount of hydroxyl groups of the interface and irreversible after long time in vacuum except for quartz. For a given interface, dip-coated film always has a higher doping level and slower de-doping than spin-coated films because of higher porosity. With careful control of the oxygen level transistor with mobility of 0.12 cm(2)/V s and on-off ratio of 29,000 are obtained for dip-coated film on glass substrate. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.synthmet.2009.01.048
http://hdl.handle.net/11536/7177
ISSN: 0379-6779
DOI: 10.1016/j.synthmet.2009.01.048
期刊: SYNTHETIC METALS
Volume: 159
Issue: 12
起始頁: 1131
結束頁: 1134
Appears in Collections:Articles