Title: Homogeneous Nucleation of Epitaxial CoSi(2) and NiSi in Si Nanowires
Authors: Chou, Yi-Chia
Wu, Wen-Wei
Chen, Lih-Juann
Tu, King-Ning
Department of Materials Science and Engineering
Issue Date: 1-Jun-2009
Abstract: Homogeneous nucleation is rare except in theory. We observed repeating events of homogeneous nucleation in epitaxial growth of CoSi(2) and NiSi silicides in nanowires of silicon by using high resolution TEM. The growth of every single atomic layer requires nucleation. Heterogeneous nucleation is prevented because of non-microreversibility between the oxide/Si and oxide/silicide interfaces. We determined the incubation time of homogeneous nucleation. The calculated and the measured nucleation rates are in good agreement. We used Zeldovich factor to estimate the number of molecules in the critical nucleus; it is about 10 and reasonable. A very high supersaturation is found for the homogeneous nucleation.
URI: http://dx.doi.org/10.1021/nl900779j
ISSN: 1530-6984
DOI: 10.1021/nl900779j
Volume: 9
Issue: 6
Begin Page: 2337
End Page: 2342
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