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dc.contributor.authorLai, YLen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorLiu, THen_US
dc.contributor.authorWang, SPen_US
dc.date.accessioned2014-12-08T15:01:59Z-
dc.date.available2014-12-08T15:01:59Z-
dc.date.issued1997-03-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.36.1856en_US
dc.identifier.urihttp://hdl.handle.net/11536/710-
dc.description.abstractA high-power-density and high-efficiency molecular-beam-epitaxy-grown atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistor (HEMT) was developed for low-voltage medium-power wireless communication applications. The HEMT exhibited a maximum drain current of 420 mA/mm and a maximum transconductance of 275 mS/mm. A two-dimensional electron gas with a high sheet charge density and a high electron mobility in the InGaAs quantum well contributed to the high current density and high transconductance of the HEMT and enhanced the device power performance at low operating voltage. An output power density of 177 mW/mm and a power-added efficiency of 61% were achieved by the 2 mm HEMT at a drain voltage of 2.4 V and a frequency of 900 MHz. At 2.1 V drain voltage and 2.4 GHz, frequency, the device demonstrated an output power of 24.4 dBm and a power-added efficiency of 57.4%. An adjacent channel leakage power of -55 dBc was attained for the 1.9-GHz pi/4-shifted quadrature phase shift keying modulation when the output power was 22.2 dBm and the drain voltage was 2.4 V.en_US
dc.language.isoen_USen_US
dc.subjectAlGaAs/InGaAsen_US
dc.subjectpower HEMTen_US
dc.subjectlow voltageen_US
dc.subjectwireless communicationsen_US
dc.subjectISM banden_US
dc.subjectL banden_US
dc.subjectPHSen_US
dc.titleHigh-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applicationsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.36.1856en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume36en_US
dc.citation.issue3Ben_US
dc.citation.spage1856en_US
dc.citation.epage1861en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1997WT45700110-
Appears in Collections:Conferences Paper


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