標題: Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector
作者: Shieh, Jia-Min
Yu, Wen-Chien
Huang, Jung Y.
Wang, Chao-Kei
Dai, Bau-Tong
Jhan, Huang-Yan
Hsu, Chih-Wei
Kuo, Hao-Chung
Yang, Fu-Liang
Pan, Ci-Ling
光電工程學系
Department of Photonics
關鍵字: amplification;electrodes;elemental semiconductors;mesoporous materials;MOSFET;nanotechnology;photodetectors;porous semiconductors;semiconductor quantum dots;silicon;silicon compounds
公開日期: 15-六月-2009
摘要: A fully silicon-based metal-oxide-semiconductor field-effect transistor is demonstrated for the detection of near-infrared light. Si nanocrystals (nc-Si) are synthesized in the nanopore channels of mesoporous silica (MS) inserted between two oxide layers to form a complete gate structure of polycrystalline Si/SiO(2)/nc-Si-in-MS/SiO(2) with a polycrystalline Si electrode. Illuminating the gate with near-infrared light, a photoresponsivity as high as 2.8 A/W at 1.55 mu m can be achieved. The improved photoresponsivity is attributed to from optical transitions via interface states and a current amplification mechanism of the device.
URI: http://dx.doi.org/10.1063/1.3156806
http://hdl.handle.net/11536/7107
ISSN: 0003-6951
DOI: 10.1063/1.3156806
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 24
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000267166600008.pdf