|標題:||Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector|
Huang, Jung Y.
Department of Photonics
|關鍵字:||amplification;electrodes;elemental semiconductors;mesoporous materials;MOSFET;nanotechnology;photodetectors;porous semiconductors;semiconductor quantum dots;silicon;silicon compounds|
|摘要:||A fully silicon-based metal-oxide-semiconductor field-effect transistor is demonstrated for the detection of near-infrared light. Si nanocrystals (nc-Si) are synthesized in the nanopore channels of mesoporous silica (MS) inserted between two oxide layers to form a complete gate structure of polycrystalline Si/SiO(2)/nc-Si-in-MS/SiO(2) with a polycrystalline Si electrode. Illuminating the gate with near-infrared light, a photoresponsivity as high as 2.8 A/W at 1.55 mu m can be achieved. The improved photoresponsivity is attributed to from optical transitions via interface states and a current amplification mechanism of the device.|
|期刊:||APPLIED PHYSICS LETTERS|