標題: Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors
作者: Liu, Po-Tsun
Chou, Yi-Teh
Teng, Li-Feng
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: amorphous semiconductors;II-VI semiconductors;indium compounds;optical sensors;semiconductor thin films;thin film sensors;thin film transistors;wide band gap semiconductors;zinc compounds
公開日期: 15-六月-2009
摘要: The study investigated the photoreaction behavior of amorphous indium-zinc oxide thin film transistor (a-IZO TFT), which was thought to be insensitive to visible light. The obvious threshold voltage shift was observed after light illumination, and it exhibited slow recovery while returning to initial status. The photoreaction mechanism is well explained by the dynamic equilibrium of charge exchange reaction between O(2(g)) and O(2) in a-IZO layer. A charge pumping technique is used to confirm the mechanism and accelerate recoverability. Using knowledge of photoreaction behavior, an operation scheme of photosensing elements consist of a-IZO TFT is also demonstrated in this work.
URI: http://dx.doi.org/10.1063/1.3155507
http://hdl.handle.net/11536/7106
ISSN: 0003-6951
DOI: 10.1063/1.3155507
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 24
結束頁: 
顯示於類別:期刊論文


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  1. 000267166600037.pdf