Title: High-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applications
Authors: Lai, YL
Chang, EY
Chang, CY
Liu, TH
Wang, SP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: AlGaAs/InGaAs;power HEMT;low voltage;wireless communications;ISM band;L band;PHS
Issue Date: 1-Mar-1997
Abstract: A high-power-density and high-efficiency molecular-beam-epitaxy-grown atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistor (HEMT) was developed for low-voltage medium-power wireless communication applications. The HEMT exhibited a maximum drain current of 420 mA/mm and a maximum transconductance of 275 mS/mm. A two-dimensional electron gas with a high sheet charge density and a high electron mobility in the InGaAs quantum well contributed to the high current density and high transconductance of the HEMT and enhanced the device power performance at low operating voltage. An output power density of 177 mW/mm and a power-added efficiency of 61% were achieved by the 2 mm HEMT at a drain voltage of 2.4 V and a frequency of 900 MHz. At 2.1 V drain voltage and 2.4 GHz, frequency, the device demonstrated an output power of 24.4 dBm and a power-added efficiency of 57.4%. An adjacent channel leakage power of -55 dBc was attained for the 1.9-GHz pi/4-shifted quadrature phase shift keying modulation when the output power was 22.2 dBm and the drain voltage was 2.4 V.
URI: http://dx.doi.org/10.1143/JJAP.36.1856
http://hdl.handle.net/11536/710
ISSN: 0021-4922
DOI: 10.1143/JJAP.36.1856
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 3B
Begin Page: 1856
End Page: 1861
Appears in Collections:Conferences Paper


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