標題: High-power-density and high-efficiency atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistors for 2.4 V medium-power wireless communication applications
作者: Lai, YL
Chang, EY
Chang, CY
Liu, TH
Wang, SP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: AlGaAs/InGaAs;power HEMT;low voltage;wireless communications;ISM band;L band;PHS
公開日期: 1-三月-1997
摘要: A high-power-density and high-efficiency molecular-beam-epitaxy-grown atomic-planar-doped AlGaAs/InGaAs quantum-well power high-electron-mobility transistor (HEMT) was developed for low-voltage medium-power wireless communication applications. The HEMT exhibited a maximum drain current of 420 mA/mm and a maximum transconductance of 275 mS/mm. A two-dimensional electron gas with a high sheet charge density and a high electron mobility in the InGaAs quantum well contributed to the high current density and high transconductance of the HEMT and enhanced the device power performance at low operating voltage. An output power density of 177 mW/mm and a power-added efficiency of 61% were achieved by the 2 mm HEMT at a drain voltage of 2.4 V and a frequency of 900 MHz. At 2.1 V drain voltage and 2.4 GHz, frequency, the device demonstrated an output power of 24.4 dBm and a power-added efficiency of 57.4%. An adjacent channel leakage power of -55 dBc was attained for the 1.9-GHz pi/4-shifted quadrature phase shift keying modulation when the output power was 22.2 dBm and the drain voltage was 2.4 V.
URI: http://dx.doi.org/10.1143/JJAP.36.1856
http://hdl.handle.net/11536/710
ISSN: 0021-4922
DOI: 10.1143/JJAP.36.1856
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 36
Issue: 3B
起始頁: 1856
結束頁: 1861
顯示於類別:會議論文


文件中的檔案:

  1. A1997WT45700110.pdf