標題: Nanorod epitaxial lateral overgrowth of a-plane GaN with low dislocation density
作者: Ling, Shih-Chun
Chao, Chu-Li
Chen, Jun-Rong
Liu, Po-Chun
Ko, Tsung-Shine
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Cheng, Shun-Jen
Tsay, Jenq-Dar
電子物理學系
光電工程學系
Department of Electrophysics
Department of Photonics
關鍵字: dislocation density;epitaxial growth;gallium compounds;III-V semiconductors;nanostructured materials;nanotechnology;photoluminescence;semiconductor epitaxial layers;semiconductor growth;transmission electron microscopy;wide band gap semiconductors;X-ray diffraction
公開日期: 22-六月-2009
摘要: The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on a nanorod GaN template. The investigation of x-ray diffraction showed that the strain in a-plane GaN grown on r-plane sapphire could be mitigated. The average threading dislocation density estimated by transmission electron microscopy was reduced from 3x10(10) to 3.5x10(8) cm(-2). From the temperature-dependent photoluminescence, the quantum efficiency of the a-plane GaN was enhanced by the nanorod epitaxial lateral overgrowth (NRELOG). These results demonstrated the opportunity of achieving a-plane GaN films with low dislocation density and high crystal quality via NRELOG.
URI: http://dx.doi.org/10.1063/1.3158954
http://hdl.handle.net/11536/7094
ISSN: 0003-6951
DOI: 10.1063/1.3158954
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 25
結束頁: 
顯示於類別:期刊論文


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