|標題:||Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces|
Liu, W. -R.
Hsieh, W. F.
Hsu, C. -H.
Department of Photonics
|關鍵字:||contact resistance;electrical resistivity;electron density;II-VI semiconductors;semiconductor-metal boundaries;thermionic emission;titanium;wide band gap semiconductors;X-ray photoelectron spectra;zinc compounds|
|摘要:||We report on the effect of ultraviolet (UV) treatment on the specific contact resistance (rho) and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher rho of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of rho. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in rho of Ti/ZnO samples.|
|期刊:||JOURNAL OF APPLIED PHYSICS|
|Appears in Collections:||Articles|
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