標題: Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces
作者: Lin, Yow-Jon
Tsai, Chia-Lung
Liu, W. -R.
Hsieh, W. F.
Hsu, C. -H.
Tsao, Hou-Yen
Chu, Jian-An
Chang, Hsing-Cheng
光電工程學系
Department of Photonics
關鍵字: contact resistance;electrical resistivity;electron density;II-VI semiconductors;semiconductor-metal boundaries;thermionic emission;titanium;wide band gap semiconductors;X-ray photoelectron spectra;zinc compounds
公開日期: 1-Jul-2009
摘要: We report on the effect of ultraviolet (UV) treatment on the specific contact resistance (rho) and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher rho of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of rho. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in rho of Ti/ZnO samples.
URI: http://dx.doi.org/10.1063/1.3157201
http://hdl.handle.net/11536/7089
ISSN: 0021-8979
DOI: 10.1063/1.3157201
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 106
Issue: 1
結束頁: 
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