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dc.contributor.authorSyu, Jin-Siangen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorYen, Ying-Chiehen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:09:16Z-
dc.date.available2014-12-08T15:09:16Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn0895-2477en_US
dc.identifier.urihttp://dx.doi.org/10.1002/mop.24433en_US
dc.identifier.urihttp://hdl.handle.net/11536/7076-
dc.description.abstractThe 0.35-mu m SiGe BiCMOS high linearity Gilbert upconverters are demonstrate in this article by utilizing NMOS and PMOS transconductance amplifiers (TCAs), respectively. To improve the linearity of a Gilber upconverter, the IF input TCA is rerplaced by a bias-offset differential pair. A reactive LC current combiner is used as the load of the Gilber mixer to double the output current. The upconverter with an NMOS TCA archieves the conversion gain of -4 dB, the OP(ldB) of -11 dBm, and the OIP(3) of 5.5 dBm, whereas the other one with a PMOS TCA has the conversion gain, OP(ldB), and OIP(3) of -6 dB, -11 dBm, and 9.5 dBm, respectively. Furthermore, the LC current combiner can be extended to a dual-band version. The 2.4/5.7 GHz dual-band upconverters is also demonstrated in this work. The conversion gain at 2.4/5.7 GHz is -3/-3.5 dB with the OP(ldB) of -15.5/-15 dBm and the OIP(3) of -2.5/-3 dBm, respectively. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 1718-1722, 2009; Published online in Wiley Interscience (www.interscience.wiley.com). DOI 10.1002/mop.24433en_US
dc.language.isoen_USen_US
dc.subjectSiGe BiCMOSen_US
dc.subjectbias-offseten_US
dc.subjectGilbert mixeren_US
dc.subjecttransconductance amplifier (TCA)en_US
dc.subjectdual-banden_US
dc.titleGILBERT UPCONVERSION MIXERS USING SINGLE-BAND/DUAL-BAND LC CURRENT COMBINERSen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/mop.24433en_US
dc.identifier.journalMICROWAVE AND OPTICAL TECHNOLOGY LETTERSen_US
dc.citation.volume51en_US
dc.citation.issue7en_US
dc.citation.spage1718en_US
dc.citation.epage1722en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:000265905200033-
dc.citation.woscount2-
Appears in Collections:Articles


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