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dc.contributor.authorChang, Yu-Weien_US
dc.contributor.authorHuang, Yang-Tungen_US
dc.date.accessioned2014-12-08T15:09:14Z-
dc.date.available2014-12-08T15:09:14Z-
dc.date.issued2009-07-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2009.2020176en_US
dc.identifier.urihttp://hdl.handle.net/11536/7045-
dc.description.abstractThe ring-shaped phototransistor with a floating bulk enclosed by a ring-shaped photodiode is proposed to enhance the responsivity for the ultraviolet/blue spectral range. The P-channel metal-oxide-semiconductor field-effect transistor and N-channel metal-oxide-semiconductor field-effect transistor phototransistors were manufactured using a standard 0.35-mu m complimentary metal-oxide-semiconductor (CMOS) technology. When the phototransistors were illuminated with 400-nm light, the measurement results for 3-V bias demonstrated a responsivity higher than 1500 A/W, which is also superior to that of other reported photodetectors manufactured using a standard CMOS technology. Even for very small bias voltages such as 0.1 V, the phototransistor can exhibit a responsivity of 17.9 A/W.en_US
dc.language.isoen_USen_US
dc.subjectOptical receiversen_US
dc.subjectoptoelectronic devicesen_US
dc.subjectphotodetectorsen_US
dc.subjectphototransistorsen_US
dc.titleThe Ring-Shaped CMOS-Based Phototransistor With High Responsivity for the UV/Blue Spectral Rangeen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2009.2020176en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume21en_US
dc.citation.issue13en_US
dc.citation.spage899en_US
dc.citation.epage901en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000268019300002-
dc.citation.woscount7-
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