Title: High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators
Authors: Lin, S. H.
Chiang, K. C.
Chin, Albert
Yeh, F. S.
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Jul-2009
Abstract: We have fabricated high-kappa Ni/TiO(2)/ZrO(2)/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 x 10(-8) A/cm(2) at 125 degrees C was obtained with a high 38-fF/mu m(2) capacitance density and better than the ZrO(2) MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO(2)/ZrO(2) devices to decrease the leakage current and to a higher kappa value of 58 for TiO(2) as compared with that of ZrO(2) to preserve the high capacitance density.
URI: http://dx.doi.org/10.1109/LED.2009.2022775
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2022775
Volume: 30
Issue: 7
Begin Page: 715
End Page: 717
Appears in Collections:Articles