|Title:||High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators|
|Authors:||Lin, S. H.|
Chiang, K. C.
Yeh, F. S.
Department of Electronics Engineering and Institute of Electronics
|Abstract:||We have fabricated high-kappa Ni/TiO(2)/ZrO(2)/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 x 10(-8) A/cm(2) at 125 degrees C was obtained with a high 38-fF/mu m(2) capacitance density and better than the ZrO(2) MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO(2)/ZrO(2) devices to decrease the leakage current and to a higher kappa value of 58 for TiO(2) as compared with that of ZrO(2) to preserve the high capacitance density.|
|Journal:||IEEE ELECTRON DEVICE LETTERS|
|Appears in Collections:||Articles|