標題: Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin films
作者: Tseng, WT
Hsieh, YT
Lin, CF
Tsai, MS
Feng, MS
材料科學與工程學系
奈米中心
Department of Materials Science and Engineering
Nano Facility Center
公開日期: 1-三月-1997
摘要: The chemical-mechanical polishing (CMP) process has been proven to be the most promising method for accomplishing global planarization. In this paper, results of chemical-mechanical polishing of fluorinated silicon dioxide (SiOF) thin films are presented. Nanohardness, elastic modulus, and bonding structure of fluorinated silicon dioxides are characterized in order to evaluate their correlations with CMP performance. The results show that under fixed chemistry and mechanical parameters, the CMP removal rate increases significantly with increasing fluorine content in the oxides due to the lower hardness and elastic modulus in the films. Higher CMP removal rate is observed for fluorinated oxides polished with slurry of pH 10 relative to pH 9. Compared with undoped oxides, SiOF films are more sentisitive to chemical and moisture attacks as reflected by the post-CMP increase in refractive index.
URI: http://hdl.handle.net/11536/700
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 144
Issue: 3
起始頁: 1100
結束頁: 1106
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WR23700057.pdf