The growth of the high K SiN Gate Dielectrics through N Radical Process
|關鍵字:||氮化矽;閘極;Silicon Nitride;Gate Dielectrics|
This study is mainly to investigate the possibility of using nitrogen Radical to grow an ultra-thin H-K SixNy film as Gate Dielectric for under 0.1-micron generation application in semiconductor. Using the microwave power to excite N2 and form the plasma and then, allow nitrogen radical to incorporate with silicon. It will incorporate firstly with the silicon atoms from the surface of the processed wafer to form the SixNy. It’s discovered that the SixNy have strong self-limitation for their film growth. Finally we successfully grew the films which thicknesses were 21~ 23 angstroms in the Applied Materials RTP Chamber combined with microwave source. Several different process conditions were used to deposit 3 batches of wafers and then, their thickness, standard deviation, within-wafer and wafer-to-wafer uniformity were compared. At last, a metal layer (5000 angstroms Al) was added in order to measure the C-V and I-V characteristics.