標題: Study of electrical characterization of 2-methyl-9, 10-di(2-naphthyl)anthracene doped with tungsten oxide as hole-transport layer
作者: Hsieh, Ming-Ta
Ho, Meng-Huan
Lin, Kuan-Heng
Chen, Jenn-Fang
Chen, Teng-Ming
Chen, Chin H.
電子物理學系
應用化學系
友訊交大聯合研發中心
Department of Electrophysics
Department of Applied Chemistry
D Link NCTU Joint Res Ctr
關鍵字: charge injection;electric admittance;electrical conductivity;organic compounds;organic light emitting diodes;organic semiconductors;p-i-n diodes;thin films;tungsten compounds
公開日期: 20-Jul-2009
摘要: An efficient p-doped transport layer composed of an ambipolar material, 2-methyl-9,10-di(2-naphthyl)anthracene (MADN) and tungsten oxide (WO(3)) has been developed. The admittance spectroscopy studies show that the incorporation of WO(3) into MADN can greatly improve the hole injection and the conductivity of the device. Moreover, when this p-doped layer was incorporated in the tris(8-quinolinolato)aluminum-based device, it achieved a current efficiency of 4.0 cd/A and a power efficiency of 2.4 lm/W at 20 mA/cm(2). This work paves the way to simplify the fabrication of future p-i-n organic light-emitting devices with a single common ambipolar MADN material.
URI: http://dx.doi.org/10.1063/1.3173824
http://hdl.handle.net/11536/6951
ISSN: 0003-6951
DOI: 10.1063/1.3173824
期刊: APPLIED PHYSICS LETTERS
Volume: 95
Issue: 3
結束頁: 
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