標題: The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition
作者: Fu, S. F.
Wang, S. M.
Lee, L.
Chen, C. Y.
Tsai, W. C.
Chou, W. C.
Lee, M. C.
Chang, W. H.
Chen, W. K.
電子物理學系
Department of Electrophysics
公開日期: 22-七月-2009
摘要: Self-assembled InN nanodots have been prepared at 650 degrees C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.
URI: http://dx.doi.org/10.1088/0957-4484/20/29/295702
http://hdl.handle.net/11536/6945
ISSN: 0957-4484
DOI: 10.1088/0957-4484/20/29/295702
期刊: NANOTECHNOLOGY
Volume: 20
Issue: 29
結束頁: 
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