標題: Intercrossed Sheet-Like Ga-Doped ZnS Nanostructures with Superb Photocatalytic Actvitiy and Photoresponse
作者: Lu, Ming-Yen
Lu, Ming-Pei
Chung, Yao-An
Chen, Ming-Jer
Wang, Zhong Lin
Chen, Lih-Juann
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 23-七月-2009
摘要: Intercrossed ZnS nanostructures doped with Ga (ZnS:Ga nanowalls) have been synthesized in high yield from mixed powders in a vacuum furnace. ZnS:Ga nanowalls were grown vertically on the substrate with the size in the range of several micrometers and the thickness down to similar to 15 nm and have very rough edges. Due to the high surface area and distinctive morphology of ZnS:Ga nanowalls, the photocatalytic activity and the photoresponse show superior properties compared to ZnS:Ga films. The increased conductivity of metal-semiconductor-metal (Ag-ZnS:Ga nanowalls-Ag) Schottky photodetectors under light illumination is attributed to the photogenerated electron-hole pairs, the desorption of oxygen molecules on the ZnS:Ga surface, and the lowering of the Schottky barrier height. The results indicate that ZnS:Ga nanowalls are promising candidate materials for photocatalysts and applicable as photodetectors, optical switches, and sensors in the visible light region.
URI: http://dx.doi.org/10.1021/jp903350x
http://hdl.handle.net/11536/6943
ISSN: 1932-7447
DOI: 10.1021/jp903350x
期刊: JOURNAL OF PHYSICAL CHEMISTRY C
Volume: 113
Issue: 29
起始頁: 12878
結束頁: 12882
顯示於類別:期刊論文


文件中的檔案:

  1. 000268139800039.pdf