標題: High efficiency light emitting diode with anisotropically etched GaN-sapphire interface
作者: Lo, M. H.
Tu, P. M.
Wang, C. H.
Hung, C. W.
Hsu, S. C.
Cheng, Y. J.
Kuo, H. C.
Zan, H. W.
Wang, S. C.
Chang, C. Y.
Huang, S. C.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: dislocations;electroluminescent devices;etching;gallium compounds;III-V semiconductors;light emitting diodes;sapphire;wide band gap semiconductors
公開日期: 27-Jul-2009
摘要: We report the fabrication and study of high efficiency ultraviolet light emitting diodes with inverted micropyramid structures at GaN-sapphire interface. The micropyramid structures were created by anisotropic chemical wet etching. The pyramid structures have significantly enhanced the light output efficiency and at the same time also improved the crystal quality by partially relieving the strain and reducing the dislocation defects in GaN. The electroluminescent output power at normal direction was enhanced by 120% at 20 mA injection current and the output power integrated over all directions was enhanced by 85% compared to a reference sample.
URI: http://dx.doi.org/10.1063/1.3190504
http://hdl.handle.net/11536/6939
ISSN: 0003-6951
DOI: 10.1063/1.3190504
期刊: APPLIED PHYSICS LETTERS
Volume: 95
Issue: 4
結束頁: 
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