標題: Evolution of Fluorine Content with Precipitate Formation in Fluorine-Doped Silicon Oxide
作者: Wu, Jun
Wang, Ying-Lang
Kuo, Cheng-Tzu
Pan, Fu-Ming
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-八月-2009
摘要: Precipitates appear on fluorine-doped silicon oxide (SiOF) film when the film surface is exposed to atmospheric air. They are flake-type and hexagonal-shaped and show up rapidly after initiation, clustered at wafer center. It was found that the onset of precipitation is closely related to fluorine concentration of SiOF films, those with higher fluorine content exhibit high propensity, of precipitation, along with more significant fluorine loss. In this study, the microstructural changes of SiOF films in the course of precipitation were examined. The Fourier transform infrared spectra of SiOF films showed the declined intensities of Si-F(n) (n = 1, 2) bonding peaks at time after the formation of precipitates. In the surface analysis by X-ray photoelectron spectroscopy, the binding energy of F 1s reduced similar to 0.5eV. after, precipitation, indicating also decreased Si-F(n) bonding on the surface layer of SiOF films. Meanwhile, analysis by thermal desorption spectroscopy indicated that the unstable fluorine content in the SiOF film is significantly reduced after precipitation. (C) 2009 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.48.081403
http://hdl.handle.net/11536/6910
ISSN: 0021-4922
DOI: 10.1143/JJAP.48.081403
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 48
Issue: 8
結束頁: 
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