標題: Effects of Plasma Damage on Metal-insulator-Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal-Oxide-Semiconductor Field-Effect Transistor Technology
作者: Weng, Wu-Te
Lee, Yao-Jen
Lin, Hong-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-2009
摘要: The effects of damage on mixed-signal (MS)/radio-frequency (RF) circuits integrated with metal-insulator-metal (MIM) capacitors and advanced metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied in this work. The impact of damage on an MIM oxide is evaluated by connecting its capacitor top metal (CTM) to an upper-level metal with a large antenna ratio (AR(CTM)) used in an actual CTM circuit connected to an interconnect. In addition to the dielectric degradation of a transistor, we also investigate the damage-enhanced negative bias temperature instability (NBTI) degradation of a transistor with its gate electrode connected to an MIM capacitor with a large ARCTM for various gate oxide thicknesses. A model is proposed to explain the experimentally observed dependence of NBTI degradation on AR(CTM) and accurately simulate failure distributions in the presence of plasma damage. (C) 2009 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.48.086001
http://hdl.handle.net/11536/6909
ISSN: 0021-4922
DOI: 10.1143/JJAP.48.086001
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 48
Issue: 8
結束頁: 
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