Title: Effect of Ta(2)O(5) Doping on Electrical Characteristics of SrTiO(3) Metal-Insulator-Metal Capacitors
Authors: Huang, Ching-Chien
Cheng, Chun-Hu
Liou, Bo-Heng
Yeh, Fon-Shan
Chin, Albert
Department of Electronics Engineering and Institute of Electronics
Issue Date: 1-Aug-2009
Abstract: The effect of Ta(2)O(5) doping on electrical characteristics of SrTiO(3) (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta(2)O(5)-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-alpha) of 510 ppm/V(2) and a high capacitance density of similar to 20 fF/mu m(2) are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-alpha, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO. (C) 2009 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.48.081401
ISSN: 0021-4922
DOI: 10.1143/JJAP.48.081401
Volume: 48
Issue: 8
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