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dc.contributor.authorChang, Kuo-Juien_US
dc.contributor.authorYang, Feng-Yuen_US
dc.contributor.authorLiu, Cheng-Chinen_US
dc.contributor.authorHsu, Meei-Yuen_US
dc.contributor.authorLiao, Ta-Chuanen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2014-12-08T15:09:03Z-
dc.date.available2014-12-08T15:09:03Z-
dc.date.issued2009-08-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2009.04.002en_US
dc.identifier.urihttp://hdl.handle.net/11536/6897-
dc.description.abstractWe have developed a technique for the preparation of thin film transistors (TFTs) through the self-patterning of various organic and inorganic materials via solution processing using a wide range of solvents. To obtain selectively self-patterned layers, we treated the oxide dielectric with two-phase patterned self-assembled monolayers of hexamethyldisilazane (HMDS) and octyltrichlorosilane. The conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) in water and the dielectric polymer poly(vinyl phenol) in propylene glycol methyl ether acetate were both selectively deposited and patterned on the HMDS regions with high-quality feature shapes. When source and drain electrodes were patterned on the bottom-gate oxide wafer, we also self-patterned organic and inorganic semiconductors around the channel (HMDS) regions. These TFT devices exhibited moderate to good electronic characteristics. This method has great potential for the economical full solution processing of large-area electronic devices. The selectivity in the patterning phenomena can be understood in terms of surface energy interactions. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSelf-patterningen_US
dc.subjectSAMsen_US
dc.subjectSurface energyen_US
dc.subjectOrganic thin film transistorsen_US
dc.titleSelf-patterning of high-performance thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2009.04.002en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume10en_US
dc.citation.issue5en_US
dc.citation.spage815en_US
dc.citation.epage821en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000268368400012-
dc.citation.woscount12-
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