標題: Self-patterning of high-performance thin film transistors
作者: Chang, Kuo-Jui
Yang, Feng-Yu
Liu, Cheng-Chin
Hsu, Meei-Yu
Liao, Ta-Chuan
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Self-patterning;SAMs;Surface energy;Organic thin film transistors
公開日期: 1-Aug-2009
摘要: We have developed a technique for the preparation of thin film transistors (TFTs) through the self-patterning of various organic and inorganic materials via solution processing using a wide range of solvents. To obtain selectively self-patterned layers, we treated the oxide dielectric with two-phase patterned self-assembled monolayers of hexamethyldisilazane (HMDS) and octyltrichlorosilane. The conducting polymer poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonic acid) in water and the dielectric polymer poly(vinyl phenol) in propylene glycol methyl ether acetate were both selectively deposited and patterned on the HMDS regions with high-quality feature shapes. When source and drain electrodes were patterned on the bottom-gate oxide wafer, we also self-patterned organic and inorganic semiconductors around the channel (HMDS) regions. These TFT devices exhibited moderate to good electronic characteristics. This method has great potential for the economical full solution processing of large-area electronic devices. The selectivity in the patterning phenomena can be understood in terms of surface energy interactions. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.orgel.2009.04.002
http://hdl.handle.net/11536/6897
ISSN: 1566-1199
DOI: 10.1016/j.orgel.2009.04.002
期刊: ORGANIC ELECTRONICS
Volume: 10
Issue: 5
起始頁: 815
結束頁: 821
Appears in Collections:Articles


Files in This Item:

  1. 000268368400012.pdf