標題: Phase transition behaviors of Mo- and nitrogen-doped Ge(2)Sb(2)Te(5) thin films investigated by in situ electrical measurements
作者: Huang, Yu-Jen
Chen, Yen-Chou
Hsieh, Tsung-Eong
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Aug-2009
摘要: Phase-change behaviors of Ge(2)Sb(2)Te(5) (GST) thin films doped with molybdenum (Mo) or nitrogen (N) were investigated by utilizing in situ electrical property measurement, x-ray diffraction (XRD), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy. It was found that the Mo doping mainly reduces the resistivity level of amorphous GST while the N-doping raises both the resistivity levels of amorphous and crystalline GSTs. XRD and TEM analyses revealed that the element doping stabilizes the amorphous state of GST and suppresses the grain growth in GST films. This resulted in the increase in recrystallization temperature (T(m)) and activation energy (E(a)) of amorphous-to-crystalline phase transition in GST layers, as revealed by the calculation in terms of Kissinger's theory. The results of data fitting into various percolation models and Johnson-Mehl-Avrami analysis indicated the heterogeneous feature of phase transition process in GST layers that the nucleation first occurs at the atmosphere/sample interface and the recrystallization front advances into the interior of sample in a layer-by-layer manner along the direction of surface normal.
URI: http://dx.doi.org/10.1063/1.3194787
http://hdl.handle.net/11536/6894
ISSN: 0021-8979
DOI: 10.1063/1.3194787
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 106
Issue: 3
起始頁: 
結束頁: 
Appears in Collections:Articles