Title: Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states
Authors: Yen, ST
Lee, CP
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
Keywords: quantum well lasers;quantum wells;semiconductor device modeling;semiconductor lasers;spontaneous emission;visible lasers
Issue Date: 1-Mar-1997
Abstract: GaInP-AlGaInP strained quantum-well lasers with emission wavelength at 630-nm band are theoretically analyzed in detail and then optimized, The valence band structure of quantum wells is obtained by evaluating the 6x6 Luttinger-Kohn Hamiltonian including the coupling among the heavy hole, the light hole, and the spin-orbital split-off hole bands, The effect of optical transition from/to continuum states not confined to the quantum well is studied, It is found that the optical transition from/to the continuum states is serious as the band gap of the confining layers is close to the quasi-Fermi level separation, leading to considerable radiative current, This radiative current is undesirable since the corresponding optical transition does not contribute significantly to the threshold gain, The gain-radiative current characteristic is therefore poor for confining layers containing a low Al content. To avoid unreasonable gain/absorption, the non-Markovian convolution lineshape is used instead of the conventional Lorentzian lineshape. The leakage current is high for single quantum-well lasers with wide bandgap confining layers, It can be reduced by increasing the quantum-well number, the dopant concentration, and the band gap of cladding layers, The calculated threshold current agrees wed with the observation, The band gap shrinkage due to the carrier-carrier interaction is considered to obtain an emission wavelength consistent with the experimental result.
URI: http://dx.doi.org/10.1109/3.556014
ISSN: 0018-9197
DOI: 10.1109/3.556014
Volume: 33
Issue: 3
Begin Page: 443
End Page: 456
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