Title: Diode-pumped passively mode-locked 1342 nm Nd:YVO(4) laser with an AlGaInAs quantum-well saturable absorber
Authors: Huang, S. C.
Cheng, H. L.
Chen, Yi-Fan
Su, K. W.
Chen, Y. F.
Huang, K. F.
Department of Electrophysics
Issue Date: 1-Aug-2009
Abstract: We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO(4) laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated. (C) 2009 Optical Society of America
URI: http://dx.doi.org/10.1364/OL.34.002348
ISSN: 0146-9592
DOI: 10.1364/OL.34.002348
Volume: 34
Issue: 15
Begin Page: 2348
End Page: 2350
Appears in Collections:Articles