標題: Metal Oxide Film for Growing Vertically Aligned Single-Walled Carbon Nanotubes
作者: Tseng, Wen-Shou
Wang, Wei-Hsiang
Hong, Tasi-Hau
Kuo, Cheng-Tzu
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-八月-2009
摘要: In the present study, we use a method that uses the oxidation state of platinum in Co-Cr-Pt oxide films to cause a volume expansion to form isolated nanoparticles through exposure to H(2) microwave plasma. The generated nanoparticles are then used to grow single-walled carbon nanotubes (SWCNTs) at similar to 600 degrees C without the application of a buffer layer using a microwave plasma chemical vapor deposition system. The effects of metal oxide film thickness on the growth of SWCNTs are investigated. The characterization techniques including X-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy are carried out, with the results showing that this method used is highly efficient in generating very small and dense catalytic nanoparticles. The results also show that, when the metal oxide film thickness is no more than 2nm, the nanoparticles produced with diameters ranging from 2 to 3nm can be effective for growing vertically and densely aligned SWCNTs. (C) 2009 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.48.085502
http://hdl.handle.net/11536/6856
ISSN: 0021-4922
DOI: 10.1143/JJAP.48.085502
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 48
Issue: 8
結束頁: 
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