標題: Statistical Metrology of Metal Nanocrystal Memories With 3-D Finite-Element Analysis
作者: Shaw, Jonathan
Hou, Tuo-Hung
Raza, Hassan
Kan, Edwin Chihchuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Nanocrystal (NC);nonvolatile memories;programming window distribution;3-D electrostatics
公開日期: 1-八月-2009
摘要: We study the parametrical yield of memory windows for the metal nanocrystal (NC) Flash memories with consideration of the 3-D electrostatics and channel percolation effects. Monte Carlo parametrical variation that accounts for the number and size fluctuations in NCs as well as channel length is used to determine the threshold voltage distribution and bit error rate for gate length scaling to 20 nm. Devices with nanowire-based channels are compared with planar devices having the same gate stack structure. Scalability prediction by 1-D analysis is found to be very different from 3-D modeling due to underestimation of effective NC coverage and failure to consider the 3-D nature of the channel percolation effect.
URI: http://dx.doi.org/10.1109/TED.2009.2024108
http://hdl.handle.net/11536/6851
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2024108
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 8
起始頁: 1729
結束頁: 1735
顯示於類別:期刊論文


文件中的檔案:

  1. 000268282400023.pdf