From the technology comparison and market trend to study SiGe process development on RF IC
The fifty-year advancement of semiconductor has resulted in the prosperous development of information technology. Also, the frequent evolution of semiconductor technology has easily made an change on current industry environment. During the recent ten years, the rapid development in wireless communication has made the swift achievement in Radio Frequency IC (RF IC). Besides, the GaAs semiconductor technology used for RF IC becomes a hot topic for semiconductor investment in recent years. Although GaAs has good performance of high frequency , it cannot be integrated with main stream Si-base semiconductor technology. This is the fatal disadvantage of GaAs for future tendency of SOC (System On a Chip) technology. In 1998, IBM had announced the SiGe technology for high frequency IC, which has direct influence on RF IC market. This paper is intended to study the future development and influence of SiGe semiconductor technology on RF IC market by comparing device characters and technology trend between SiGe and GaAs. In addition, this study is expected to provide a reference for a new opportunity and potential threat to investors of GaAs semiconductor technology.
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