Effects of Forming Gas Annealing on Degradation of the Ferroelectric PZT and SBT Thin Films
S. Y. Chen
|關鍵字:||還原氣氛退火;鋯鈦酸鉛;鍶鉍鉭;Forming Gas Annealing;PZT;SBT;MFIS;MIM|
The SBT and PZT thin films were fabricated on Pt/Ti/SiO2/Si and Al2O3/Si substrates by using MOD process. The effects of forming gas annealing on structure and electrical properties of ferroelectric thin films annealed at 200oC~ 500oC will be investigated in this work. The results show that the forming gas annealing will cause the degradation of remanent polarization of both SBT and PZT films on Pt/Ti/SiO2/Si (MFM structure). However, the degradation is more serious for the PZT films with Pt coating prior to forming gas annealing that could be related to the catalyst effect of Pt. On the other hand, For the PZT and SBT films on Al2O3/Si, since the PZT films is difficult to crystallize the peorvskite phase on the Al2O3/Si, the effect of forming gas annealing is focused on the SBT /Al2O3/Si. It was found that after forming gas annealing treatment, the capacitance was reduced. According to SIMS analysis, it shows that the degradation is probably related to the composition variation of SBT film. However, it was observed that the leakage current of SBT films on Al2O3/Si substrates was reduced about one and half orders magnitude as compared to that without forming gas annealing.
|Appears in Collections:||Thesis|