A Study on (Ta2O5)1-X-(TiO2)X Dielectric Film and the Application on Microwave Passive Device
|關鍵字:||(Ta2O5)1-X-(TiO2)X;dielectric thin film;IrO2;magnetron rf sputter;microwave passive device;五氧化二鉭-二氧化鈦;介電薄膜;二氧化銥;磁控射頻濺鍍法;微波被動元件|
Amorphous (Ta2O5)1-X-(TiO2)X films were fabricated by rf magnetron co-sputtering and annealed through a rapid thermal processing(RTP). The film thickness was controlled within 300A. The film was sandwiched between IrO2 and Al as the bottom and top electrode in order to study its electrical and physical properties. The relationships among surface roughness, annealing temperature, annealing time, leakage current and dielectric constant was discussed. The highest dielectric constant was obtained for a film of composition at TiO2/Ta2O5 ratio equal to 9.65%. The film crystallized at temperature larger than 650oC and its leakage current increased with RTP temperature. The leakage current mechanism is identified to be Pool-Frenkel emission. The S parameters of microwave filter fabricated by the dielectric film were measured by CPW method. The result was compared with Sonnet simulation. The discrepancy between the experimental central resonant frequency and the simulated one is found due to the deviation of dielectric constant and film thickness the preset one.
|Appears in Collections:||Thesis|