Title: Photovoltaic effects in BiFeO(3)
Authors: Yang, S. Y.
Martin, L. W.
Byrnes, S. J.
Conry, T. E.
Basu, S. R.
Paran, D.
Reichertz, L.
Ihlefeld, J.
Adamo, C.
Melville, A.
Chu, Y. -H.
Yang, C. -H.
Musfeldt, J. L.
Schlom, D. G.
Ager, J. W., III
Ramesh, R.
Department of Materials Science and Engineering
Issue Date: 10-Aug-2009
Abstract: We report a photovoltaic effect in ferroelectric BiFeO(3) thin films. The all-oxide heterostructures with SrRuO(3) bottom and tin doped indium oxide top electrodes are characterized by open-circuit voltages similar to 0.8-0.9 V and external quantum efficiencies up to similar to 10% when illuminated with the appropriate light. Efficiencies are at least an order of magnitude larger than the maximum efficiency under sunlight (AM 1.5) thus far reported for ferroelectric-based devices. The dependence of the measured open-circuit voltage on film thickness suggests contributions to the large open-circuit voltage from both the ferroelectric polarization and band offsets at the BiFeO(3)/tin doped indium oxide interface.
URI: http://dx.doi.org/10.1063/1.3204695
ISSN: 0003-6951
DOI: 10.1063/1.3204695
Volume: 95
Issue: 6
Begin Page: 
End Page: 
Appears in Collections:Articles