標題: Thermal analysis on the degradation of poly-silicon TFTs under AC stress
作者: Weng, C. F.
Chang, T. C.
Tai, Y. H.
Huang, S. T.
Wu, K. T.
Chen, C. W.
Kuo, W. C.
Young, T. F.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: TFT;AC;Dymanic stress;LTPS;Poly-Si
公開日期: 15-Aug-2009
摘要: In this work, the degradation mechanism of N-channel poly-silicon thin-film transistor (poly-Si TFT) has been investigated under dynamic voltage stress at room temperature. The ON-current of TFT is degraded to as low as 0.3 times of the initial value after 1000 s stress. On the other hand, both the sub-threshold swing and threshold voltage kept well during the AC stress. The current crowding effect was rapidly increased with increasing of stress duration. However, comparing the initial and degraded characteristics at rising temperature, namely, 150 degrees C, the ON-current of TFT only decrease to 75% of the initial value after 1000 s AC stress. It depicts that creation of effective trap density in tail-states of poly-Si film is responsible for the electrical degradation of poly-Si TFT. At high temperature, electron has enough energy to pass the energy barrier created by ac stress and the degradation is less obvious. (C) 2009 Published by Elsevier B.V.
URI: http://dx.doi.org/10.1016/j.matchemphys.2009.03.035
http://hdl.handle.net/11536/6814
ISSN: 0254-0584
DOI: 10.1016/j.matchemphys.2009.03.035
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 116
Issue: 2-3
起始頁: 344
結束頁: 347
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