標題: Characteristics of a-Plane Green Light-Emitting Diode Grown on r-Plane Sapphire
作者: Ling, Shih-Chun
Wang, Te-Chung
Chen, Jun-Rong
Liu, Po-Chun
Ko, Tsung-Shine
Chang, Bao-Yao
Lu, Tien-Chang
Kuo, Hao-Chung
Wang, Shing-Chung
Tsay, Jenq-Dar
光電工程學系
Department of Photonics
關鍵字: A-plane GaN;electroluminescence (EL);green light-emitting diodes (LEDs);polarization degree
公開日期: 15-八月-2009
摘要: In this work, we have successfully grown a-plane green light-emitting diodes (LEDs) on r-plane sapphire and investigated the device characteristics of a-plane green LEDs. The apparent emission polarization anisotropy was observed and the polarization degree was as high as 67.4%. In addition, the electroluminescence (EL) spectra first revealed a wavelength blue-shift with increasing drive current to 20 mA, which could be attributed to the band-filling effect, and then the EL peak become constant. The current-voltage curve showed the forward voltage of a-plane LED grown on r-plane sapphire substrate was 3.43 V and the differential series resistance was measured to be about 24 Omega as 20-mA injected current. Furthermore, the output power was 240 mu W at 100-mA drive current.
URI: http://dx.doi.org/10.1109/LPT.2009.2023234
http://hdl.handle.net/11536/6812
ISSN: 1041-1135
DOI: 10.1109/LPT.2009.2023234
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 21
Issue: 16
起始頁: 1130
結束頁: 1132
顯示於類別:期刊論文


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  1. 000268525900004.pdf