標題: Enhancement of operation temperature of InAs/GaAs quantum-dot infrared photodetectors with hydrogen-plasma treatment
作者: Lin, Wei-Hsun
Tseng, Chi-Che
Chao, Kuang-Ping
Lin, Shih-Yen
Wu, Meng-Chyi
光電工程學系
Department of Photonics
公開日期: 1-Sep-2009
摘要: Postprocess hydrogen treatment is performed over fabricated ten-period InAs/GaAs quantum-dot infrared photodetectors. While keeping similar spectral responses at the same applied voltage, a reduced dark current is observed for the H-plasma-treated device, which is attributed to the suppression of surface leakage-current induced by surface damage during device processing. The significant reduction in dark current also enhanced the operation temperature of the device up to 100 K. Also observed are the smoothed-out mesa edges after the H-plasma treatment, which results in trapezoidal mesa edges. In this case, a longer propagation length in the device of the reflected incident light at the mesa edge would enhance the normal-incident absorption ratio of the H-plasma-treated device. (C) 2009 American Vacuum Society. [DOI:10.1116/1.3196781]
URI: http://dx.doi.org/10.1116/1.3196781
http://hdl.handle.net/11536/6732
ISSN: 1071-1023
DOI: 10.1116/1.3196781
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 27
Issue: 5
起始頁: 2102
結束頁: 2105
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