標題: Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT
作者: Lin, S. H.
Cheng, C. H.
Chen, W. B.
Yeh, F. S.
Chin, Albert
機械工程學系
電子工程學系及電子研究所
Department of Mechanical Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: LaTiO;low V(t);solid-phase diffusion (SPD)
公開日期: 1-九月-2009
摘要: In this letter, we report a low threshold voltage (VI) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only 0.63 run. This was achieved by using Ni-induced solid-phase diffusion of SiO(2)-covered Ni/Sb that reduced the high-kappa dielectric interfacial reactions.
URI: http://dx.doi.org/10.1109/LED.2009.2027723
http://hdl.handle.net/11536/6730
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2027723
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 9
起始頁: 999
結束頁: 1001
顯示於類別:期刊論文


文件中的檔案:

  1. 000269443000036.pdf