標題: MILC-TFT With High-kappa Dielectrics for One-Time-Programmable Memory Application
作者: Chiang, Tsung-Yu
Ma, Ming-Wen
Wu, Yi-Hong
Kuo, Po-Yi
Wang, Kuan-Ti
Liao, Chia-Chun
Yeh, Chi-Ruei
Chao, Tien-Sheng
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: Gate-induced drain leakage (GIDL);metal-induced lateral crystallization (MILC);one-time programmable (OTP);thin-film transistor (TFT)
公開日期: 1-九月-2009
摘要: In this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-cbannel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-kappa dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage V(th) similar to -0.78 V, excellent subthreshold swing similar to 105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.
URI: http://dx.doi.org/10.1109/LED.2009.2027035
http://hdl.handle.net/11536/6729
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2027035
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 9
起始頁: 954
結束頁: 956
顯示於類別:期刊論文


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  1. 000269443000021.pdf