Title: 短通道矽在二氧化矽之上金氧半場效電晶體的新二維解析模式
A 2-D Analytic Model for Short-Channel SOI MOSFET
Authors: 謝文義
Wen Yi Hsieh
Ching Yuan Wu
Keywords: 矽在二氧化矽之上;完全解離;臨界電壓模式;電流電壓模式;SOI;fully depleted;threshol voltage model;current-voltage model
Issue Date: 2000
Abstract: 近年來,由於矽在二氧化矽之上的金氧半場效電晶體結構和傳統的金氧半場效電晶體相比,具有許多的優點,因此吸引了相當多的注意力。而且,近來有許多家公司相繼宣布將會使用矽在二氧化矽之上的金氧半場效電晶體製程技術在一般商業性的超大型積體電路產品上。因此,我們可以預期在不久的未來矽在二氧化矽之上的金氧半場效電晶體技術將成為主流技術之一。在本篇論文中,我們將會分析和討論矽在二氧化矽之上的金氧半場效電晶體物理特性和優點。另外,我們將著重在短通道完全解析的矽在二氧化矽之上的金氧半場效電晶體解析模式。因此,短通道完全解析的矽在二氧化矽之上的金氧半場效電晶體臨界電壓和電流―電壓的解析模式將會被推導。藉由二維數值分析模擬器(Medici)的幫助,我們推導的解析模式的準確性將可得到驗證。最後,一些未來尚須做進一步努力的研究方向將在本論文的最後面提出。
Recently, the SOI structure has drawn much attention for its advantages over bulk device such as perfect device isolation, elimination of latch-up path and improved radiation hardness. Moreover, a number of companies have announced that they will use the Silicon-on-Insulator (SOI) technology in commercial VLSI production. Therefore, it is expected that the SOI technology will become a mainstream technology. In this thesis, the basic physical characteristics and advantages of SOI MOSFET will be analyzed and discussed. This thesis focuses on the analytic model of the short-channel fully-depleted SOI MOSFET. Therefore, the analytic threshold voltage model and I-V model are derived for short-channel fully-depleted SOI MOSFET. With the help of a 2D numerical simulator (Medici), the accuracy of the analytic models of short-channel fully-depleted SOI MOSFET have been confirmed. Finally, some future researches deserved further efforts are summarized
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