Properties of RF Sputtered SBTN Ferroelectric Films
At the present time, ferroelectric random access memeory (FRAMs) using ferroelectric capacitor is a destructive readout. In principle, it is much more desirable to build a nonvolatile memory device based on the ferroelectric memory field-effect transistor (FEMFET) to serve both as the storage element and the sensing device with a nondestructive readout operation. In practice, however, there are many challenges which have held back the progress in that direction, a major one being the difficulty of making an electrically switchable ferroelectric thin film on Si with good interface properties and long retention time. To overcome these problems, buffer layers are usually inserted between the ferroelectric layer and silicon substrate. In our study, rf sputtering was employed to grow SBTN ferroelectric thin films. We deposited the SBTN films on SiO2/Si substrate at various deposition temperatures ranged from 500。C to 575。C and with oxygen to argon mixing ratios (OMR) from 10% to 40%, in which the 27 nm thick of SiO2 film was employed. The ferroelectric properties and reliability of the Pt/SBTN/SiO2/Si structure were examined.
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