標題: Grain-size-related transient terahertz mobility of femtosecond-laser-annealed polycrystalline silicon
作者: Wang, Y. -C.
Ahn, H.
Chuang, C. -H.
Ku, Y. -P.
Pan, C. -L.
光電工程學系
Department of Photonics
公開日期: 1-九月-2009
摘要: We investigated carrier-relaxation dynamics of femtosecond laser annealed (FLA) polycrystalline silicon (poly-Si). The correlation between morphology and electrical properties of poly-Si after femtosecond laser annealing is elucidated by optical-pump-terahertz-probe and terahertz time-domain spectroscopies. The transient conductivities of FLA-processed poly-Si with large (similar to 500 nm) and small (similar to 50 nm) grain sizes were both well fitted by the Drude model in the terahertz regime from 0.4 to 2 THz. The transient mobilities of these materials were determined to be 175 +/- 19.4 and 94.5 +/- 20.2 cm(2)/V s, respectively. After annealing, reduction of deep-state density rather than tail-state density in large-grain poly-Si is responsible for its higher mobility.
URI: http://dx.doi.org/10.1007/s00340-009-3580-2
http://hdl.handle.net/11536/6693
ISSN: 0946-2171
DOI: 10.1007/s00340-009-3580-2
期刊: APPLIED PHYSICS B-LASERS AND OPTICS
Volume: 97
Issue: 1
起始頁: 181
結束頁: 185
顯示於類別:期刊論文


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