Title: Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO(2) memory films
Authors: Wang, Sheng-Yu
Lee, Dai-Ying
Tseng, Tseung-Yuen
Lin, Chih-Yang
Department of Electronics Engineering and Institute of Electronics
Issue Date: 14-Sep-2009
Abstract: In this study, we propose a simple method to produce the various interface thicknesses within Ti/ZrO(2) by changing the thickness of the Ti top electrode. As the Ti thickness increases, the induced interface thickness also increases to degrade the dielectric strength of the ZrO(2), further lowering the forming voltage. However, when the interface layer is thick enough, it will trap sufficient charges to build up an opposite electric field to increase the forming voltage. The induced interface thickness is found to obviously affect the bias polarity of the resistive switching behavior and the device reliability. A fluctuant ON process is also demonstrated to be attributed to the competition between the formation and rupture of the conducting filaments. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3231872]
URI: http://dx.doi.org/10.1063/1.3231872
ISSN: 0003-6951
DOI: 10.1063/1.3231872
Volume: 95
Issue: 11
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