Title: InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range
Authors: Lin, Wei-Hsun
Tseng, Chi-Che
Chao, Kuang-Ping
Mai, Shu-Cheng
Lin, Shih-Yen
Wu, Meng-Chyi
光電工程學系
Department of Photonics
Keywords: Quantum-dot infrared photodetectors (QDIPs)
Issue Date: 15-Sep-2009
Abstract: A ten-period InAs-GaAs quantum-dot infrared photodetector (QDIP) with 8-nm In(0.15)Ga(0.85) As capping layer grown after quantum-dot (QD) deposition is investigated. With reduced InAs QD coverage down to 2.0 mono-layers, responses at 10.4 and 8.4 mu m are observed for the device under positive and negative biases, respectively. The phenomenon is attributed to the large Stark effect resulted from the asymmetric band diagrams of the device under different voltage polarities. The demonstration of long-wavelength infrared detections with the simple structures of the InGaAs-capped QDIP is advantageous for the development of multicolor QDIP focal-plane arrays.
URI: http://dx.doi.org/10.1109/LPT.2009.2026630
http://hdl.handle.net/11536/6677
ISSN: 1041-1135
DOI: 10.1109/LPT.2009.2026630
Journal: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 21
Issue: 18
Begin Page: 1332
End Page: 1334
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