Electroless Plating Pd Induced Crystallization of Amorphous Thin Films
YewChung Sermon Wu
|關鍵字:||Electroless Plating Pd;TFT;Poly-Si;MIC/MILC;annealing;crystallization;無電鍍鈀;薄膜電晶體;複晶矽;金屬誘發結晶/金屬誘發側向結晶;退火;結晶|
In this thesis, metal-induced crystallization (MIC) / metal-induced lateral crystallization (MILC) processes using metal seed layer by electroless Pd plating method was proposed. The Pd clusters formed by electroless plating method uniformly distributed on the surface of amorphous silicon (a-Si) films. Needle-liked polycrystalline silicon (poly-Si) films were obtained when the a-Si films with electroless plating Pd were annealed at 550 ℃ for 1 hr. For the pre-patterned a-Si films, Pd clusters were preferred to deposit on the sidewalls of the silicon island. After the samples were annealed, long needle-liked poly-Si grains were observed. Most of the grains were lying in the same direction with an angle of ~55° from the sidewalls of the silicon island. Based on this finding, a new TFT structure was proposed. The electron characteristics of the new TFT structure are better than that of the conventional TFT structure. This attributes that the orientation of needle-liked grain parallel the moving direction of carrier. The characteristics of TFT are improved by NH3 plasma treatment.
|Appears in Collections:||Thesis|