標題: Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer
作者: Wu, Y. H.
Chang, Li
Lin, P. Y.
Chiang, C. H.
Chen, J. F.
Chi, T. W.
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
公開日期: 21-九月-2009
摘要: In this work, we investigated the effect of a 1 nm thick GaAs(94.3)Sb(0.57) buffer layer on structural and optical properties of buried InAs quantum dots (QDs) and wetting layers (WLs) in GaAs using photoluminescence (PL) and transmission electron microscopy (TEM). The density and emission wavelength of the QDs on the buffer were increased due to the size and the shape modification in comparison with those without a buffer. PL analysis of the ground-state (GS) peak of the QDs on the buffer showed a red-shift of 18 meV with an enhanced intensity. In addition, PL and TEM show that the buffer has a weak effect on the WLs and no apparent changes occur for the buffer during QD deposition and the capping process.
URI: http://dx.doi.org/10.1088/0022-3727/42/18/185106
http://hdl.handle.net/11536/6665
ISSN: 0022-3727
DOI: 10.1088/0022-3727/42/18/185106
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 42
Issue: 18
結束頁: 
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